Asianometry EUV Photoresists: The Next Generation?
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May 18, 2025 Discover the fascinating evolution of photoresists in semiconductor manufacturing, transitioning from traditional methods to cutting-edge solutions for extreme ultraviolet lithography. Learn about the game-changing advancements in metal oxide and dry resists, as well as the fierce competition and patent disputes brewing between industry players. This technological shift poses exciting possibilities for the future of semiconductor efficiency and resolution.
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How CARs Work and Dominate
- Chemically amplified resists (CARs) have dominated semiconductor lithography for nearly 40 years.
- CARs use photoacid generators to catalyze chemical reactions improving resist sensitivity and pattern formation.
The RLS Trade-Off Challenge
- Photoresist performance is measured by resolution, line edge roughness, and sensitivity (RLS).
- Improving one RLS aspect tends to worsen another, known as the RLS trade-off.
EUV Challenges for Traditional CARs
- EUV photons interact with resist at the atomic level, making resist sensitivity depend on elemental composition.
- Traditional CARs are less sensitive to EUV due to low atomic number elements, creating challenges for EUV lithography.