Asianometry China’s “New” EUV Light Source
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Mar 30, 2025 A groundbreaking announcement has surfaced about Huawei's Chinese-developed EUV machine, utilizing a new light source known as Laser-Induced Discharge Plasma. This innovative approach is touted as more efficient than traditional methods, raising competitive stakes in semiconductor technology. The discussion dives into the evolution of EUV light sources, comparing LDP with ASML's systems. It also highlights the potential future of EUV technology in China as industry dynamics shift.
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China's EUV Light Source
- Huawei is testing a domestically developed EUV machine using a Laser-Induced Discharge Plasma (LDP) light source.
- This differs from ASML's Laser-Produced Plasma (LPP) method, and LDP is claimed to be more efficient.
EUV Lithography Challenges
- EUV lithography requires generating 13.5 nanometer light, which is challenging to produce efficiently.
- ASML's LPP method involves hitting tin droplets with a CO2 laser, creating plasma that emits EUV light.
Early EUV Research
- Early EUV research explored Discharge Produced Plasma (DPP), involving a high-current discharge between electrodes to create plasma.
- Z-pinch, known from nuclear fusion research, was used to confine and heat the plasma to extreme temperatures.