
Let’s Break Down the 45nm Process Node
Asianometry
00:00
Strain engineering for NMOS and PMOS
Asianometry covers tensile T-CECL for NMOS and SiGe epitaxy in trenches to create compressive strain for PMOS.
Play episode from 36:02
Transcript

Asianometry covers tensile T-CECL for NMOS and SiGe epitaxy in trenches to create compressive strain for PMOS.